From Silicon to SiC detectors

Europe/Rome
Sala Conferenze (INFN LNS)

Sala Conferenze

INFN LNS

Via Santa Sofia 62 - Catania
Description
SiCILIA is an INFN-CNR collaboration to develop innovative processes, which allows a massive production of thick (>100 μm) and large area (about 1 cm2) SiC detectors with unprecedented level of defects. Two different manufacture technology will be investigated: the Schottky and the p/n junctions. The Schottky represents today the state of art for SiC detectors. We propose to push forward the limits for this technology in relation to the thickness and the active area. The p/n represents a novel solution for SiC, that is particularly promising in analogy to similar junctions based on Silicon devices. The fallout of the SiCILIA project will be useful also for other fields of fundamental and applied research. Some of these aspects are included in the project. In the frame of the SiCILIA activities the workshop aim to discuss the state of art of silicon detector for a possible technological transfer on SiC.
Paper
Slides
Participants
  • Alberto Fazzi
  • annamaria muoio
  • Antonella Sciuto
  • Antonello Anzalone
  • Antonio Trifiro'
  • Carmen Altana
  • Clementina Agodi
  • Daniela Calvo
  • Daniele Bongiovanni
  • Danilo Bonanno
  • Dario Giove
  • Diana Carbone
  • Domenico Lo Presti
  • Fabio Longhitano
  • Francesco Cappuzzello
  • Francesco La Via
  • Francesco La Via
  • Francesco Moscatelli
  • Francesco Musumeci
  • Gabriele Chiodini
  • Gaetano Agnello
  • Gaetano Lanzalone
  • Giacomo Cuttone
  • gianluca santagati
  • Giovanni Ambrosi
  • giovanni casini
  • Giuliana Giuseppina Milluzzo
  • giuseppe cardella
  • Giuseppe Cirrone
  • Giuseppe Giraudo
  • Giuseppe Gorini
  • Giusy Valvo
  • Grazia Litrico
  • Guglielmo Fortunato
  • lorenzo neri
  • Lucia Calcagno
  • Luciano Pandola
  • Manuela Cavallaro
  • Mara Bruzzi
  • Marco Mauceri
  • Maria Grazia Pellegriti
  • Mariangela Bondi'
  • Massimo Mazzillo
  • Maurizio Boscardin
  • Maurizio Cabibbo
  • Nicolò Piluso
  • NIKIT N DESHMUKH
  • Nunzio Randazzo
  • Paolo Finocchiaro
  • Piero Giorgio Fallica
  • Salvo Tudisco
  • Santo Reito
  • Stefania Privitera
  • Valentina Scuderi
  • Valeria Puglisi
  • Valter Bonvicini
  • Thursday, 7 April
    • 14:30 14:40
      Welcome LNS INFN 10m
      Speaker: Giacomo Cuttone (LNS)
    • 14:40 14:45
      Welcome IMM 5m
      Speaker: Guglielmo Fortunato (IMM CNR Catania)
    • 14:45 15:05
      Sviluppi di sensori SiC in INFN 20m
      Speaker: Valter Bonvicini (TS)
      Slides
    • 15:05 15:25
      NUMEN: outlook towards high beam intensities experiments 20m
      Speaker: Clementina Agodi (LNS)
      Slides
    • 15:25 15:45
      SiC detectors for ELI-Physics 20m
      Speaker: Gaetano Lanzalone (LNS)
      Slides
    • 15:45 16:15
      Overview on sensors design and prototyping at STMicroelectronics 30m
      Speaker: G. Valvo (ST)
      Slides
    • 16:15 16:45
      The lesson learned developing microdosimetry systems at INFN-Politecnico of Milan: going from Si design toward SiC-based applications 30m
      Speaker: Alberto Fazzi (MI)
      Slides
    • 16:45 17:15
      Overview on sensors design and prototyping at FBK 30m
      Speaker: Mr Maurizio Boscardin (FBK)
      Slides
    • 17:15 17:35
      Coffee 20m
    • 17:35 18:05
      Use of Epitaxial Silicon Material for hybrid pixels and Silicon detectors assembla in Torino 30m
      Speaker: Daniela Calvo (TO)
      Slides
    • 18:05 18:35
      Silicon detectors in spiace: the INFN expeience. 30m
      Speaker: Giovanni Ambrosi (PG)
      Slides
    • 18:35 19:05
      Front-End and Read-Out elettronica for the NUMEN experiment 30m
      Speaker: Domenico Lo Presti (CT)
      Slides
    • 09:30 10:00
      Diamonds for neutron detection 30m
      Speaker: Prof. Giuseppe Gorini (MIB)
      Slides
    • 10:00 10:30
      R&D on Silicon detectors with in the FAZIA collaboration: results and perspectives 30m
      Speaker: Giovanni Casini (FI)
      Slides
    • 10:30 11:00
      SiCILIA SiC applications for high luminosity LHC 30m
      Speaker: Gabriele Chiodini (LE)
      Slides
    • 11:00 11:30
      Coffee 30m
    • 11:30 12:00
      Effects of irradiation in silicon carbide radiation detectors 30m
      Speaker: Francesco Moscatelli (PG)
      Slides
    • 12:00 12:30
      Ion irradiation of SiC Schottky diodes 30m
      Speaker: Lucia Calcagno
      Slides
    • 12:30 13:00
      4H-asiC defects 30m
      Speaker: N. Piluso
      Slides
    • 13:00 14:30
      Lunch 1h 30m
    • 14:30 15:00
      SiC devices for applied and particle physics 30m
      Speaker: Mara Bruzzi (FI)
      Slides
    • 15:00 15:30
      4H-SiC photodiodes for Ultraviolet light detection 30m
      Speaker: A. Sciuto
    • 15:30 15:50
      Challenges of SiC technology for high radiation hardness detectors 20m
      Speaker: Francesco La Via
      Slides