Olena Karacheban
(DESY/BTU)
5/28/15, 9:00โฏAM
S6 - Solid State Detectors
Poster
A multichannel detector designed for single minimum ionising particle detection using a stack of sapphire plates is presented.
The performance of the detector was studied in a 5 GeV electron beam at DESY-II. The detector was operated together
with the EUDET beam telescope, which allowed the reconstruction of the position of the impact point at the detector. For each sapphire
plate the...
Ms
Olena Karacheban
(PhD BTU Cottus, DESY-Zeuthen)
5/28/15, 9:01โฏAM
S6 - Solid State Detectors
Poster
Instrumentation near the beam-pipe requires extremely radiation hard
sensors. Inside CMS two rings instrumented with 12 single crystal diamond sensors each are installed on both sides of the interaction point. The sensors are subdivided in two pads, and each pad is read out by a dedicated fast radiation hard ASIC in 130 nm CMOS technology.
Due to the excellent time resolution collision...
Mr
Varghese Babu
(Tata Institute of Fundamental Research)
5/28/15, 9:03โฏAM
S6 - Solid State Detectors
Poster
The Belle-II experiment at the SuperKEKB collider in Japan will operate at
a luminosity approximately 50 times greater than its predecessor (Belle). At
its heart lies a six-layer vertex detector comprising two layers of pixelated
silicon detectors (PXD) and four layers of double-sided silicon microstrip
detectors (SVD). One of the key measurements for Belle-II is time-dependent
CP...
Lorenzo Vitale
(TS)
5/28/15, 9:04โฏAM
S6 - Solid State Detectors
Poster
The Belle-II VerteX Detector has been designed to improve the performances with respect to Belle and to cope with the unprecedented luminosity of 8x10^35 cm-2s-1 achievable by SUPERKEKB.
Special care is needed to monitor both the radiation dose accumulated through the life of the experiment and the instantaneous radiation rate, in order to be able to react quickly to sudden spikes for the...
Niloufar Alipour Tehrani
(ETH Zรผrich, CERN)
5/28/15, 9:05โฏAM
S6 - Solid State Detectors
Poster
A vertex detector is under development for CLIC, a future linear electronโpositron collider with a maximum centre of mass energy of 3 TeV. In order to perform precision physics measurements in a challenging environment, the CLIC vertex detector must have excellent spatial resolution, full geometrical coverage extending to low polar angles, extremely low mass, low occupancy facilitated by...
Paola Tropea
(CERN)
5/28/15, 9:06โฏAM
S6 - Solid State Detectors
Poster
In the last few years, CO2 evaporative cooling has been one of the favourite technologies chosen for the thermal management of tracking detectors at LHC. ATLAS Insertable B-Layer and CMS Phase I Pixel have adopted it and their systems are now operational or under commissioning. The CERN PH-DT team is now merging the lessons learnt on these two systems in order to prepare the design and...
Dr
Tetsuichi Kishishita
(University of Bonn)
5/28/15, 9:07โฏAM
S6 - Solid State Detectors
Poster
We present the recent development of Depleted Monolithic Active Pixel Sensors (DMAPS), implemented with a Toshiba 130~nm CMOS process. Recent progress in CMOS technology enables to utilize a high-resistive silicon substrate as a charge sensitive layer and to fabricate CMOS electronics inside of nested-wells in the same substate. Such technology offers truly monolithic devices as an alternative...
Ms
Geetika Jain
(Delhi University)
5/28/15, 9:08โฏAM
S6 - Solid State Detectors
Poster
Transient Current Technique (TCT) is one of the important methods to characterize Silicon (Si) detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the...
Dr
Minni Singla
(GSI Darmstadt)
5/28/15, 9:09โฏAM
S6 - Solid State Detectors
Poster
The Compressed Baryonic Matter (CBM) experiment is one of the major scientific pillars at FAIR at Darmstadt, Germany which aims to explore the QCD phase diagram in the regions of high net baryon densities and moderate temperatures. The Silicon Tracking System (STS), the core detector of the CBM experiment, is located in the dipole magnet to provide track reconstruction and momentum...
Dr
K. Lalwani
(University of Delhi)
5/28/15, 9:10โฏAM
S6 - Solid State Detectors
Poster
In order to address the problems caused by harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all Si tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. In order to develop radiation hard pixel sensors, simulations have been performed using 2D TCAD device simulators, SILVACO and SYNOPSYS, to obtain design parameters. Simulations...
Prof.
Gian Franco Dalla Betta
(University of Trento)
5/28/15, 9:11โฏAM
S6 - Solid State Detectors
Poster
Future experiments at the European X-Ray Free Electron Laser (XFEL) will require silicon pixel sensors with demanding performance: a wide dynamic range from 1 up to 10^4 12-keV photons per pixel, a small pixel pitch (~100 ฮผm), minimum dead area and a radiation tolerance of 1GGy per 3 years of operation. Therefore, the development of four-side buttable tile detectors that meet such requirements...
Mr
Axel Kรถnig
(HEPHY Vienna)
5/28/15, 9:12โฏAM
S6 - Solid State Detectors
Poster
Silicon-based sensors are well established as tracking devices in modern particle detectors. The high spatial resolution and the comparable low costs make them best suited for large scale applications like the CMS Tracker. However, the required quantities often exceed the capabilities of academic institutions and therefore commercial vendors are assigned with the production. Since 2009 the...
Mr
Maurizio Boscardin
(FBK)
5/28/15, 9:13โฏAM
S6 - Solid State Detectors
Poster
We report on the development of a new generation of 3D pixel sensors for the High-Luminosity LHC (HL-LHC) within the framework of the INFN-FBK โPhase 2โ R&D program. In the first year of the project, the sensor technology and design have been optimized for increased pixel granularity (e.g., 25x100 or 50x50 um^2 pixel size), extreme radiation hardness (up to a fluence of 2x10^16 neq cm^-2),...
137.
Development of arrays of Silicon Drift Detectors and readout ASICs for the SIDDHARTA experiment
Filippo Schembari
(MI)
5/28/15, 9:14โฏAM
S6 - Solid State Detectors
Poster
This work deals with the development of new Silicon Drift Detector (SDDs) and readout electronics for the upgrade of the INFN-SIDDHARTA experiment. The SIDDHARTA experiment performs a high resolution X-ray spectroscopy measurement of kaonic atoms transitions to determine the strong interaction induced shift and width of the lowest experimentally accessible level.
The detector under...
Dr
Heinz Pernegger
(CERN Physics Department)
5/28/15, 9:15โฏAM
S6 - Solid State Detectors
Poster
The luminosity of the Large Hadron Collider (LHC) will increase nearly by an order of magnitude over its design luminosity during the HL-LHC upgrade with the goal to substantially enhance the sensitivity of its experiments to rare processes. The present ATLAS tracker, called Inner Detector, will be replaced with a newly developed tracker, which can cope with the expected high radiation damage,...
Dr
Jens Dopke
(Rutherford Appleton Laboratory)
5/28/15, 9:16โฏAM
S6 - Solid State Detectors
Poster
The over-depleted CMOS Monolithic Active Pixel Sensor project (OverMOS) is investigating the use of high-resistivity (rho >~ 1k Ohm cm) substrate layers constructed using the InMAPS process as a way to achieve high-radiation tolerance, low power, and high speed. The InMAPS process allows MAPS pixels to have the same complexity of electronics as found in hybrid sensors without compromising...
Mr
Alexandre Rachevski
(INFN Trieste)
5/28/15, 9:17โฏAM
S6 - Solid State Detectors
Poster
We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm^2 at 20 C) and a shallow uniformly implanted p+ entrance window that enables sensitivity of at least up to photons of oxygen K-alpha-1 emission line (524.9 eV). The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square...
Prof.
Zheng Li
(Xiangtan University, Xiangtan, China)
5/28/15, 9:18โฏAM
S6 - Solid State Detectors
Poster
The one-dimensional design consideration for the spiral (cylindrical geometry) Si drift detector (SDD) described in literature [1-2] has been modified and generalized for small drift distance (R) compatible to the detector thickness (d), i.e. for Rโผd, and for non uniform backside biasing situations. With smaller R, an array of SDD with small pixel size down to a few hundreds of microns will be...
Alessandra Di Gaspare
(LNF)
5/28/15, 9:19โฏAM
S6 - Solid State Detectors
Poster
Since its discovery in 2004, Graphene has been proposed in a wide number of applications, including microelectronic devices and photo-detectors, thanks to its unique electronic properties. Here, we propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. Graphene is employed as the gate readout electrode, able to sense any changes in the field...
Dr
Florian Feldbauer
(Helmholtz-Institut Mainz/ University Mainz)
5/28/15, 9:20โฏAM
S6 - Solid State Detectors
Poster
The PANDA-Experiment will be part of the new FAIR facility at Darmstadt, Germany. It is a fixed target experiment in the antiproton storage ring HESR providing beams with excellent resolution $\Delta$p/p\,=\,10$^{-5}$. The scientific scope of PANDA consists of several pillars like: hadron spectroscopy, properties of hadrons in matter, nucleon structure and hypernuclei. In particular with PANDA...
Prof.
Ivan Peric
(KIT Karlsruhe Germany)
5/28/15, 9:21โฏAM
S6 - Solid State Detectors
Poster
High-voltage CMOS (HVCMOS) detectors are depleted active pixel detectors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well.
HVCMOS sensors...
Daniele Passeri
(University and INFN Perugia)
5/28/15, 9:22โฏAM
S6 - Solid State Detectors
Poster
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 1รท2ร10E16 1 MeV equivalent neutrons).
The model is based on a past modeling scheme featuring three levels with donor removal and slightly increased...
Andreas Kornmayer
(CERN)
5/28/15, 9:24โฏAM
S6 - Solid State Detectors
Poster
The Pixel Luminosity Telescope is a new complement to the CMS detector for the LHC Run II data taking period. It consists of eight 3-layer telescopes based on silicon pixel detectors that are placed around the beam pipe on each side of CMS viewing the interaction point at small angle. A fast 3-fold coincidence of the pixel planes in each telescope will provide a bunch-by-bunch
measurement of...
Dr
Susanne Kuehn
(Albert-Ludwigs-University Freiburg)
5/28/15, 9:26โฏAM
S6 - Solid State Detectors
Poster
In about ten years from now, the Phase-2 upgrade of the LHC is planned. This will result in a severe radiation dose and high particle rates for the multipurpose exeperiments because of a foreseen luminosity of ten times higher the LHC design luminosity. Several detector components will have to be upgraded in the experiments. In the ATLAS experiment the current inner detector will be replaced...
Dr
Doug Schaefer
(CERN)
5/28/15, 9:27โฏAM
S6 - Solid State Detectors
Poster
After the first three years of the LHC running the ATLAS experiment
extracted it's pixel detector system to refurbish and re-position
the optical readout drivers and install a new barrel layer of pixels.
The experiment has also taken advantage of this access to also install
a set of beam monitoring telescopes with pixel sensors, four each in
the forward and backward regions. These...
Prof.
Arie Ruzin
(Tel Aviv University)
5/28/15, 9:28โฏAM
S6 - Solid State Detectors
Poster
Electrical contact properties play a major in the overall performance of metal-semiconductor-metal (M-S-M) type detectors. For near-room-temperature applications the M-S-M detectors have to be constructed with high resistivity, wide bandgap semiconductors, in order to limit the electrical noise related to leakage currents. In wide bandgap semiconductors the high resistivity is often achieved...
