Speaker
Dr
Jens Dopke
(Rutherford Appleton Laboratory)
Description
The over-depleted CMOS Monolithic Active Pixel Sensor project (OverMOS) is investigating the use of high-resistivity (rho >~ 1k Ohm cm) substrate layers constructed using the InMAPS process as a way to achieve high-radiation tolerance, low power, and high speed. The InMAPS process allows MAPS pixels to have the same complexity of electronics as found in hybrid sensors without compromising the charge collection performance. No high voltage is used at the front of the design, making this architecture fully compatible with CMOS electronics. A small CMOS-level voltage is enough to create an electric field in the depletion region, thus speeding up charge collection and reducing the spread of charge between several pixels. This also enhances the signal to noise ratio and improves radiation hardness, as the reduced charge collection time means the sensor is less affected by the reduction of the minority carrier collection time due to the lattice damage generated by Non Ionising Energy Loss (NIEL). We report on the first results from test structures implemented In TowerJazz 180nm CMOS and plans for a full architecture prototype.
Primary author
Dr
Jens Dopke
(Rutherford Appleton Laboratory)
Co-author
Dr
Fergus Wilson
(RAL)
