Speaker
Prof.
Norbert Wermes
(University of Bonn)
Description
While so far monolithic pixel detectors have remained in the realm of
comparatively low radiation application outside LHC, new developments
exploiting high resistivity substrates with three or four well CMOS process options allow fairly large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. We have prototyped several pixel matrices with high ohmic substrates and full CMOS electronics and characterized them in the lab and in test beams. On the basis of this an ATLAS CMOS demonstrator program has been started. The results available at the time of the meeting will be presented.
Primary author
Prof.
Norbert Wermes
(University of Bonn)
Co-authors
Dr
Carlos Marinas
(University of Bonn)
Dr
Fabian Huegging
(University of Bonn)
Dr
Hans Krueger
(University of Bonn)
Dr
Heinz Pernegger
(CERN Physics Department)
Mrs
Laura Gonella
(University of Bonn)
Dr
Malte Backhaus
(CERN)
Dr
Miroslav Havranek
(Institute of Physics, Prague)
Mr
Piotr Rymaszewski
(University of Bonn)
Mrs
Sonia Fernandez-Perez
(CERN)
Dr
Tetsuishi Kishishita
(University of Bonn)
Mrs
Theresa Obermann
(University of Bonn)
Mr
Tomasz Hemperek
(University of Bonn)
