Speaker
Dr
Susanne Kuehn
(Albert-Luwigs-University Freiburg)
Description
RD50 is a CERN R&D collaboration dedicated to the development of radiation hard
semiconductor devices for application in high luminosity colliders. It is based on four pillars:
Defect and Material Characterization; Detector Characterization; Development of New Structures;
Full Detector Systems. Its ultimate goal is to develop radiation hard devices that can cope with a
fluence of 2x106 neq/cm2, to be applied for the high- luminosity LHC runs.
This factor 10 increase in fluence requires both material and device engineering. A number of new
technologies are developed within RD50. This presentation will report on the following topics:
• 3D devices, which have columnar implants across the bulk so that depletion region grow
sideways instead of vertically. They are characterized by low depletion voltage.
• CMOS pixels in HV technology, built on low resistivity p-type silicon. These
detectors, characterized by an n-well deeper than the one normally used in CMOS monolithic active
pixels (MAP’s), are expected to be more radiation hard.
• Low Gain Avalanche Detectors (LGAD’s): diodes realized with this technology
exploit the avalanche multiplication mechanism in order to generate a moderate and controlled gain.
These devices can be read-out by the same electronics used for non-multiplying diodes. Thinner
substrates can also enhance their time resolution, thus opening up to various applications. Both
pixels and strips are targets for this technology.
Collaboration
CERN RD50 Collaboration
Primary author
Dr
Virginia Greco
(IMB-CNM-CSIC)
