Speaker
Description
The recently commissioned Extremely Brilliant Source (EBS) has substantially enhanced the nano probe capacities at the ESRF. Nano diffraction imaging has been boosted by these capacities to improve in spatial resolution reaching length scales relevant for a variety of materials that are candidates for quantum computing. As band structure properties in all semiconductors sensibly depend on lattice strain, a high-resolution tool like X-ray nano diffraction can reveal subtle local variations of strain with unique definition in terms of lattice parameter sensitivity. Strain landscapes of few 10-5 can be imaged, with spatial resolution reaching now the sub 50 nm regime. High-resolution imaging of strain fields and crystalline defects in 2D quantum wells and semiconductor nanowires show the potential of this new imaging technique available to the entire user community through the public ESRF user program.
