Hans-Werner Becker, Uni-Bochum, Germany. - Measurements of Hydrogen concentrations with an 15N-beam - principle and applications.
Virginia Boldrini and Marco Pieruccini, CNR-IMM Bologna, Italy - Electrical activation of implanted dopants: Statistical mechanical aspects of defect recovery and Hall effect characterization.
Massimo Chiari, INFN, Italy - Principles of PIXE and PIGE, advanced techniques and applications.
Andrea Denker, HZB Berlin, Germany - Nuclear Physics for Semiconductors and Solar Cells.
Luigi Di Benedetto, Università di Salerno, Italy, Capacitive techniques for the defect characterization of semiconductor devices.
Enrico Di Russo,Università di Padova,Italy - Introduction to semiconductors. Doping and hyperdoping.
Filippo Fabbri, CNR-NANO Pisa, Italy - Optical characterization of implantation defects: the case study of sulphur implanted silicon.
Mike Kokkoris, National Technical University of Athens, Greece - Rutherford backscattering analyis and the method of channeling. H and D induced Nuclear Reaction Analysis as a complimentary method.
Heinz Christoph Neitzert, Università di Salerno, Italy. - Non-contact methods for the characterization of high energy particle irradiation induced defects in various semiconductors.
Francesco Velardi, Universita di Cassino, Italy - Overview of the radiation induced degradation of electronic devices.
