Welcome

Introduction to semiconductors. Doping and hyperdoping

• Enrico Di Russo (Università di Padova)

Electrical activation of implanted dopants: Statistical mechanical aspects of defect recovery and Hall effect characterization.

• Marco Pieruccini (stituto per la Microelettronica e i Microsistemi Area della Ricerca di Bologna)
• Virginia Boldrini (IMM-CNR Bologna)

Nuclear Physics for Semiconductors and Solar Cells.

• Andrea Denker (Helmholtz-Zentrum Berlin für Materialien und Energie)

Hands-On: Simulation of Ion implantation with SRIM software.

• Marica Canino (CNR Italy)

Overview of the radiation induced degradation of electronic devices.

• Francesco Velardi (University of Casssino)

Capacitive techniques for the defect characterization of semiconductor devices.

• Luigi Di Benedetto (University of Salerno)

Non-contact methods for the characterization of high energy particle irradiation induced defects in various semiconductors.

• Heinz-Christoph Neitzert (Univ. of Salerno)

Hands-On: Optoelectronic characterization of the radiation damage in light emitting diodes,

• Christoph Heinz Neizert (Univ. of Salerno)

Hands-On: DLTS spectrum Analysis.

• Luigi Di Benedetto (University of Salerno)

Optical characterization of implantation defects: the case study of sulphur implanted silicon

• Filippo Fabbri (NANO-CNR)

Characterization of materials with elastic scattering experiments using MeV protons and alpha particles beams

• Valentino Rigato (Istituto Nazionale di Fisica Nucleare)

Hands-On: Identification of the composition and thickness of the surface layers of a Schottky diode using a 4He charged particle beam.

• Raffaele Buompane (Istituto Nazionale di Fisica Nucleare)

Visit to the Enrico Fermi Research Center

Principles of PIXE and PIGE, advanced techniques and applications.

• Massimo Chiari (Istituto Nazionale di Fisica Nucleare)

Measurements of Hydrogen concentrations with an 15N-beam - principle and applications.

• Hans-Werner Becker (Ruhr-Universität Bochum)