17–21 giu 2024
INFN Sezione di Roma
Europe/Rome fuso orario

Main Subjects

Electronics and Devices
This section provides a basic introduction to electronic devices, doping, and defects induced to improve device performances. It also covers the interaction of high energy particles with semiconductors and design techniques to mitigate radiation damages.


Ion Implantation and Theory
This section covers the theory of ion implantation, which is a technique used to emulate radiation damage. It includes topics such as the heavy-ion test, ionization energy, threshold energy for defects formation, nuclear processes in solids, chemical bonds and electron screening.


Nuclear Probes: Theory and Experiments
This session is dedicated to characterization techniques both nuclear and electric. The former includes Ion Beam Analysis (IBA) techniques such as Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS), Focused Ion Beam (FIB), Nuclear Reaction Analysis (NRA) and Particle Induced X-ray Emission (PIXE).
The latter covers defect evaluation techniques in semiconductors like Admittance Spectroscopy, Deep Level Transient Spectroscopy (DLTS), Photoluminescence (PL), Electroluminescence (EL), Transient Photoluminescence (TPL), and Transient Microwave Conductivity (TRMC).