Application of a Transient-Current-Technique based on a Two- Photon-Absorption process to the characterization of a HV-CMOS deep n-well

6 set 2016, 18:00
12m
Sestri Levante

Sestri Levante

Grand Hotel dei Castelli

Relatore

Dr. Ivan Vila (Instituto de Fisica de Cantabria (CSIC-UC))

Materiali di presentazione