Conveners
Session 8 - Nuclear Microprobe Applications: Microelectronics
- Gyorgy Vizkelethy (Sandia National Laboratories)
Dr
Takeshi Ohshima
(Japan Atomic Energy Agency (JAEA), JAPAN)
10/07/2014, 14:00
Invited Technical Oral Communication
Deep-level defects which act as carrier traps are created in semiconductors during crystal growth, device fabrication and also operation under radiation conditions, and they negatively affect the device characteristics. Therefore, it is important to clarify deep levels in semiconductors. Deep Level Transient Spectroscopy (DLTS) is known as one of the most famous techniques to investigate deep...
Dr
Zeljko Pastuovic
(Australian Nuclear Science and Technology Organisation (ANSTO), Australia)
10/07/2014, 14:30
Oral Communication
The results of recent IBIC and DLTS studies of radiation damage in silicon carbide (SiC) diodes will be presented. n-type Schottky diodes prepared on an epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanned alpha particle microbeam (2 & 4 MeV He2+ ions separately) in order to create patterned damage structures at different depths within sensitive volume of tested diodes...
Dr
Luca Silvestrin
(University of Padova; INFN Sezione di Padova, Padua, Italy)
10/07/2014, 14:50
Oral Communication
Ion Electron Emission Microscopy (IEEM) at SIRAD, the heavy ion irradiation facility at the XTU Tandem on LNL, is used to obtain micrometric sensitivity maps of electronic devices to Single Event Effects (SEE). The electronic Device Under Test (DUT) is located one millimeter behind a very thin (100 nm) self-standing Silicon Nitride (Si3N4) membrane with a 40 nm Au deposition. The secondary...
