14th International Conference on Nuclear Microprobe Technology and Applications

Session

Plenary 2

7 Jul 2014, 11:40

Palazzo del Bo and Centro Culturale San Gaetano, Padova

Conveners

Plenary 2

• Dario Bisello (PD)

156. Three dimensional silicon micromachining using a nuclear microprobe

Prof. Mark Breese (Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore)

07/07/2014, 11:40

Plenary

At CIBA we have developed a process for fabricating 2 & 3D silicon and porous silicon components. This process is described and its uses in optics, photonics, microfluidics and nanoscale surface patterning are reviewed. The process is based on high-energy ion irradiation, with typically from 50 keV to 1 MeV protons and helium ions. The defects introduced by irradiation alter the hole current...

93. Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe

Dr Gyorgy Vizkelethy (Sandia National Laboratories, U.S.A.)

07/07/2014, 12:20

Plenary

In microelectronic devices exposed to energetic radiation electron-hole pairs are created. The movement of these carriers in an electric field will lead to induced current in the electrodes of the device. While this is the basic mechanism of solid-state particle detectors, this current can lead to detrimental effects in microelectronic devices. This current can induce a variety of Single Event...