14th International Conference on Nuclear Microprobe Technology and Applications

P25 - Proton Beam Writing combined with controlled subsequent electrochemical etching for the three-dimensional microstructuring of p-GaAs and p-InP for MEMS applications

11 Jul 2014, 13:00

1h

Palazzo del Bo and Centro Culturale San Gaetano, Padova

Board: 25

Poster Poster Session with Cheese and Wine

Speakers

Mr Alrik Stegmaier (Physikalisches Institut, Georg-August-Universitaet Goettingen, Germany)Ms Charlotte Rothfuchs (Physikalisches Institut, Georg-August-Universitaet Goettingen, Germany)

Description

Nowadays, an increasing demand on microelectromechanical systems can be found in the field of capacitive accelerometers, pressure sensors or energy harvesters [1,2]. Three-dimensional microstructures needed for those applications have already been fabricated with the lithographic technique Proton Beam Writing [3]. In particular, just by variation of the irradiation fluence, Proton Beam Writing in combination with fluence depending electrochemical etching proved to be promising for three-dimensional semiconductor microstructuring [4]. Recently, a controlled fabrication of free-standing or undercutted structures was possible due to finite element simulations of the electrochemical etching rates [5]. We are going to present our latest results regarding the microstructuring of p-GaAs and p-InP. [1] V. Cimalla, J. Pezoldt, and O. Ambacher, J. Phys. D: Appl. Phys., 40(20), 6386, 2007 [2] J. A. Paradiso and T. Starner, IEEE Pervasive Comput., 4(1), 18-27, 2005 [3] J.A. van Kan et al., Appl. Phys. Lett., 83(8), 1629, 2003 [4] M. Schulte-Borchers , U. Vetter, T. Koppe, H. Hofsäss, J. Micromech. Microeng., 22, 025011, 2012. [5] T. Koppe, C. Rothfuchs, M. Schulte-Borchers, H. Hofsäss, H. Boudinov, U. Vetter, IEEE J. Microelectromech. Syst, In Press, Accepted Manuscript, 2014