Speaker
Prof.
Rafi Kalish
(Technion, Israel Institute of Technology, Technion City, Haifa Israel)
Description
Diamond is a unique material with outstanding electrical, optical, chemical and mechanical properties. Recently, the negative nitrogen-vacancy color center (NV-) in diamond with its specific luminescence properties has been identifies as being the most suitable candidate for realization of scalable solid-state quantum computing systems (qubits) operating at room temperature. The quantum information in such devices is carried by the photons, emitted from the luminescing center. These, however, must be propagated and manipulated to permit their application in a large variety of most promising future devices.
In order to enhance the photon-atom coupling, specific optical structures must be realized in the diamond that contains the emitting NV center. For example, optical cavities in which a qubit (NV-) is located, and the cavities are interconnected via waveguides. All these should preferably be realized in a single diamond slab. The fabrication and processing steps commonly used for implementation of photonic crystals in semiconductors are inapplicable to diamond due to its extreme chemical and mechanical properties. This makes Focused-Ion-Beam (FIB) a very attractive tool for realization of photonic structures, such as membranes, cavities, waveguides and mirrors in diamond.
Here we describe how the use of low energy (30 keV), well focused (down to XXX nms) Ga ions enables the fabrication of various photonic devices suitable for enhancing and guiding the quantum information carrying photons from the NV center in diamond. Several photonic devices, such as planar photonic crystals in diamond membranes and triangular cross sectional nano-beams were realized by the use of 30 keV Ga ions. Their design, fabrication and optical characterizations are described. The inherent problem of shallowly implanted Ga+ ions following FIB processing has detrimental influence on diamond optical properties. We show how post processing techniques, relying on H plasma treatment and wet chemistry, can be used to remove the Ga and graphite containing outermost layers and to finely tune the dimensions of the photonic devices on the nm scale.
Primary author
Prof.
Rafi Kalish
(Technion, Israel Institute of Technology, Technion City, Haifa Israel)
