Characterization of Hafnium films for optical MKIDs at very low temperature

25 Jul 2019, 17:45
1h 15m
Piazza Città di Lombardia (Milano)

Piazza Città di Lombardia

Milano

Piazza Città di Lombardia, 1, 20124 Milano MI
Poster Low Temperature Detector fabrication techniques and materials Poster session

Speaker

Gregoire Coiffard (UCSB)

Description

From our experience with microwave kinetic inductance detectors (MKIDs) fabrication and characterization at UCSB, we have learned that the energy resolution (R=E/E) of the detectors were strongly dependent of the superconducting transition temperature; R scales as 1/TC. PtSi, Tc = 900 mK, has been used for 5 years as the superconducting material for our MKIDs arrays and we recently started to work with hafnium with a TC = 420 mK. Theoretically, going from a 900 mK PtSi to a 450 mK Hafnium should increase the energy resolution by a factor 10. We present the work done on the deposition and characterization of hafnium films. We investigate the deposition parameters to deposit low stress hafnium on various substrate. The microstructure and the crystallography of the films are studied and we correlate the films properties to the performance of the MKIDs.

Student (Ph.D., M.Sc. or B.Sc.) N
Less than 5 years of experience since completion of Ph.D Y

Primary authors

Gregoire Coiffard (UCSB) Ben Mazin (UCSB) Nicholas Zobrist (University of California, Santa Barbara) Miguel Daal (UCSB) Bruce Bumble (NASA JPL)

Presentation Materials