Noise Model of cryogenic High Electron Mobility Transistor, feasibility study of low threshold and high discrimination efficiency low temperature semiconductor detector for Coherent Electron Elastic Neutrino Nucleus Scattering (CENNS) and low mass Dark Matter direct detection experiments

25 Jul 2019, 17:45
1h 15m
Piazza Città di Lombardia (Milano)

Piazza Città di Lombardia

Milano

Piazza Città di Lombardia, 1, 20124 Milano MI
Poster Detector readout, signal processing, and related technologies Poster session

Speaker

Alex Juillard (IPNL / IN2P3 / CNRS)

Description

We present a noise model of the cryogenic High Electron Mobility Transistor developed at C2N laboratory. The model is based on dedicated measurement of voltage and current noises at temperature in the 1K-10K range. The model shows that 10 eV rms and 20 eVee rms could be obtained on the heat channel and ionization channel of massive semiconductor detector operated at low temperature.
Such performance is of high interest for both Coherent Electron Elastic Neutrino Nucleus Scattering (CENNS) experiment such as Ricochet and Dark Matter direct detection experiment such as EDELWEISS. It would allow to probe sub-keV nuclear recoils as induced by sub-GeV/c2 WIMPs and MeV neutrinos from nuclear reactor while retaining electromagnetic background discrimination.

Less than 5 years of experience since completion of Ph.D N
Student (Ph.D., M.Sc. or B.Sc.) N

Primary author

Alex Juillard (IPNL / IN2P3 / CNRS)

Presentation Materials