Speaker
Mr
Evangelos - Leonidas Gkougkousis
(Laboratoire de l'Accelerateur Lineaire)
Description
The creation of deep level defects after irradiation lowers the efficiency of a detector while increasing its operational voltage. The case of acceptor removal, observed in irradiated LGAD and other types of detectors suggests the presence of a secondary effect in addition to deep acceptor level generation. Estimation of the active dopant profile demonstrates a decrease in the acceptor concentration, proportional to the original doping concentration. Initial evidence from SiMS measurements indicated a marginal reduction on the total doping profile for proton irradiated samples, implanted with boron. A study is repeated with LGAD and boron-phosphorus samples, irradiated with thermal neutrons to fluencies of 2•10^15 neq/cm2 to 10^16 neq/cm2. Post irradiation SiMS measurements are performed and results are compared the non-irradiated and simulated doping profiles. Estimation of the boron neutron capture reactions are additionally evaluated.
Primary author
Mr
Evangelos - Leonidas Gkougkousis
(Laboratoire de l'Accelerateur Lineaire)
Co-author
Prof.
Abdenour Lounis
(Laboratoire de l'Accélérateur Linéaire)
