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28th RD50 Workshop (Torino)

6–8 Jun 2016
Torino
Europe/Rome timezone

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Session

Radiation Damage I

8 Jun 2016, 09:00
Aula Magna della Cavallerizza Reale (Torino)

Aula Magna della Cavallerizza Reale

Torino

Via Verdi 9

Conveners

Radiation Damage I

  • Marko Mikuz (Univ. Ljubljana / J. Stefan Inst.)

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  1. 35. HRTEM investigations of different clusters produced in Si by electron and neutron irradiation.
    Dr Leona Cristina Nistor (National Institute of Materials Physics)
    08/06/2016, 09:00
  2. 36. ESR of point defects in pure and 17O/13C doped Si-FZ irradiated with 3.5 and 27 MeV electrons. Correlation with TSC data.
    Dr Vasile Sergiu Nistor (National Institute of Materials Physics)
    08/06/2016, 09:20
  3. 5. Neutron Irradiated doping profile evaluation
    Mr Evangelos - Leonidas Gkougkousis (Laboratoire de l'Accelerateur Lineaire)
    08/06/2016, 09:40
    The creation of deep level defects after irradiation lowers the efficiency of a detector while increasing its operational voltage. The case of acceptor removal, observed in irradiated LGAD and other types of detectors suggests the presence of a secondary effect in addition to deep acceptor level generation. Estimation of the active dopant profile demonstrates a decrease in the acceptor...
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  4. 7. Possibilities of large fluence irradiation dosimetry using multi-crystalline Si
    Dr Eugenijus Gaubas (Vilnius University)
    08/06/2016, 10:00
    It had been shown that measurements of carrier recombination lifetime can be employed for contact-less and fast evaluation of large fluences of the hadron irradiations. The same calibration function for fluence evaluations derived using electron-grade crystalline silicon wafer fragments fits well the absolute values of carrier recombination lifetime related to the densities of radiation...
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