28th RD50 Workshop (Torino)

Session

Radiation Damage I

8 Jun 2016, 09:00

Aula Magna della Cavallerizza Reale (Torino)

Conveners

Radiation Damage I

• Marko Mikuz (Univ. Ljubljana / J. Stefan Inst.)

35. HRTEM investigations of different clusters produced in Si by electron and neutron irradiation.

Dr Leona Cristina Nistor (National Institute of Materials Physics)

08/06/2016, 09:00

36. ESR of point defects in pure and 17O/13C doped Si-FZ irradiated with 3.5 and 27 MeV electrons. Correlation with TSC data.

Dr Vasile Sergiu Nistor (National Institute of Materials Physics)

08/06/2016, 09:20

5. Neutron Irradiated doping profile evaluation

Mr Evangelos - Leonidas Gkougkousis (Laboratoire de l'Accelerateur Lineaire)

08/06/2016, 09:40

The creation of deep level defects after irradiation lowers the efficiency of a detector while increasing its operational voltage. The case of acceptor removal, observed in irradiated LGAD and other types of detectors suggests the presence of a secondary effect in addition to deep acceptor level generation. Estimation of the active dopant profile demonstrates a decrease in the acceptor...

7. Possibilities of large fluence irradiation dosimetry using multi-crystalline Si

Dr Eugenijus Gaubas (Vilnius University)

08/06/2016, 10:00

It had been shown that measurements of carrier recombination lifetime can be employed for contact-less and fast evaluation of large fluences of the hadron irradiations. The same calibration function for fluence evaluations derived using electron-grade crystalline silicon wafer fragments fits well the absolute values of carrier recombination lifetime related to the densities of radiation...