Speaker
Prof.
Marko Mikuz
(Univ. Ljubljana / J. Stefan Inst.)
Description
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 and PS protons up to 3e16 p/cm^2 was investigated by edge-TCT. From the v(E) dependence under FW bias mobility degradation with fluence was extracted. From a comparison of concurrently measured FW and reverse velocity profiles absolute electric field profiles in the silicon bulk were obtained. A 1/sqrt(Phi) dependence of mobility on fluence was obseved for both irradiations with protons provoking ~20 % more degradation at equal NIEL. The observed mobility degradation and the values of electric field indicate substantial reduction of trapping from linear extrapolation of low fluence values. An attempt is made to extract information on trapping from the measured waveforms.
Primary author
Prof.
Marko Mikuz
(Univ. Ljubljana / J. Stefan Inst.)
