Conveners
Radiation Damage II
- Juozas Vaitkus (Vilnius University)
Dr
Joern Schwandt
(University of Hamburg)
08/06/2016, 11:00
Studies of surface radiation damage and the impact of the charge distribution on the outer surface of segmented silicon sensors are ongoing at Hamburg University since 2007. In this talk, selected results obtained from measurements on test structures and strips sensors will be presented:
- dose and electric field dependence of the effective oxide charge density, Nox,
- dose and...
Mr
Sven Wonsak
(University of Liverpool)
08/06/2016, 11:20
The aim of the shallow radiation damage generation study is the creation of a multiplication layer close to the silicon sensor surface. This is done by irradiating the sensor with low energy protons at the Birmingham cyclotron, which should stop within approximately 20μm. Geant4 simulations have been used to find the best settings for the irradiation. First sensors have been irradiated with 12...
Prof.
Marko Mikuz
(Univ. Ljubljana / J. Stefan Inst.)
08/06/2016, 11:40
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 and PS protons up to 3e16 p/cm^2 was investigated by edge-TCT. From the v(E) dependence under FW bias mobility degradation with fluence was extracted. From a comparison of concurrently measured FW and reverse velocity profiles absolute electric field profiles in the silicon bulk were obtained. A 1/sqrt(Phi) dependence of...
Mr
William Holmkvist
(Linköping University)
08/06/2016, 12:00
n-type Magnetic Czochralski (MCz) was found in earlier studies to exhibit a peculiar behaviour with irradiation, in particular not exhibiting space-charge sign inversion (SCSI) after irradiation with high-energetic hadrons such as 24 GeV protons at CERN PS or 800 MeV protons at Los Alamos while the material behaved as expected after irradiation with neutrons or low-energy 23 MeV protons at...
Mr
Marcos Fernandez Garcia
(IFCA-Santander)
08/06/2016, 12:20
