Speaker
Description
Authors
Francesco Barile$^{1,2}$, Giuseppe Eugenio Bruno$^{1,2}$, Angelo Colelli$^{1,2}$, Domenico Di Bari$^{1,2}$, Shyam Kumar$^{2}$, Cosimo Pastore$^{2}$, Rajendra Nath Patra$^{2,3}$, Triloki Triloki$^{1,2}$
$^{1}$University of Bari - Department of Physics DIF, Bari, Italy
$^{2}$INFN of Bari, Bari, Italy
$^{3}$Department of Physics, University of Jammu, Jammu, India
Abstract
In high-energy physics experiments, Monolithic Active Pixel Sensors (MAPS) have become crucial components of vertex and tracking detectors over the past decade due to the integration of readout circuitry with the detection volume in a single chip.
The low material budget requirement to achieve precise tracking and vertexing capabilities for upgrade of HEP experiments such as ALICE at LHC and future experimental facilities like ePIC at EIC, leads a direct attention towards an ultra-thin (a few tens of µm), bent, wafer-scale silicon sensors produced with stitching technology.
Recent ongoing activities performed at the INFN and UniBa Laboratory in Bari will be described. The characterization of analogue silicon pixel sensors of 65 nm CMOS technology using electrical test pulsing and $^{55}$Fe as a soft X-ray source will be discussed. Furthermore, a study on timing performance will be presented.
