Jul 22 – 26, 2019
Europe/Rome timezone

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

Jul 23, 2019, 5:45 PM
1h 15m
Piazza Città di Lombardia (Milano)

Piazza Città di Lombardia


Piazza Città di Lombardia, 1, 20124 Milano MI
Poster Low Temperature Detector fabrication techniques and materials Poster session


Christine Jhabvala (NASA Goddard Space Flight Center)


Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited at 450°C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel-junctions with critical current 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD Superconducting Quantum Interference Device (SQUID) will be discussed.

Less than 5 years of experience since completion of Ph.D N
Student (Ph.D., M.Sc. or B.Sc.) N

Primary author

Christine Jhabvala (NASA Goddard Space Flight Center)


Dr Thomas Stevenson (NASA) Dr Peter Nagler (NASA Goddard Space Flight Center)

Presentation materials