Development of Optical Transition Edge Sensor Array for Photon Imaging

25 Jul 2019, 17:45
1h 15m
Piazza Città di Lombardia (Milano)

Piazza Città di Lombardia

Milano

Piazza Città di Lombardia, 1, 20124 Milano MI
Poster Low Temperature Detector Development and Physics Poster session

Speaker

Dr Toshio Konno (AIST)

Description

Transition edge sensors (TES) exhibiting high energy resolution of a single optical photon have been applied to photon-counting microscopy for biological imaging1. We are aiming to develop multi device TES showing large effective area in order to improve measurement efficiency of photon-counting microscopy. We fabricated 3×3 array TES where single device exhibits dimension of 8 µm×8 µm and film thickness of Ti 20 nm and Au 10 nm on Si substrate as shown in Fig. 1 (a). It must be checked whether each device in array TES on Si without membrane structures which keep thermally each device away operates independently or not. At first, we operated the device A and B in Fig. 1 (a) at once to obtain P-V curve of the device A as shown in Fig. 1 (b) PB = 52 pW. Joule power of the device A at 2 devices operating stayed about the same as that at single device operating, PB = 0 pW. Next, we operated the device A and B at once so that power of the device B equaled the sum of power of the 8 devices next to the device A instead of the 9 devices operating at once to obtain P-V curve of device A as shown in Fig. 1 (b) PB = 470 pW. Although joule power of the device A at PB = 470 pW was smaller than that at PB = 0 pW by 21%, electro thermal feedback on the device A at PB = 470 pW worked. Static thermal influence from neighbor devices was revealed. Dynamic thermal crosstalk is investigated by measurement of signal response.
1 K. Niwa et al., Sci. Rep., 7, 45660 (2017).
(a) 3×3 array TES where single device exhibits dimension of 8 µm×8 µm and film thickness of Ti 20 nm and Au 10 nm on Si substrate. (b) {\it P}-{\it V} curve of the device A at power of the device B ({\it P}{\tiny B}) of 0 pW, 52 pW, and 470 pW. {\it P}{\tiny B} is power of the device A. {\it V}{\tiny A} is voltage of the device A.

Student (Ph.D., M.Sc. or B.Sc.) N
Less than 5 years of experience since completion of Ph.D Y

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