Speakers
Description
State-of-the-art silicon sensors are able to operate efficiently up to fluences of 1E16/cm$^2$. Future frontier accelerators envisage the use of tracking detectors in environments with fluences exceeding 1E17/cm$^2$.
The possible solution to overcome the present limit in radiation tolerance is to exploit the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. To cope with the small signal coming from thin sensors, the Low-Gain Avalanche Diode (LGAD) design with internal multiplication of the charge carriers represents the ideal framework.
An innovative design of the LGAD gain implant will be presented based on an acceptor-donor compensation of the dopant atoms to preserve internal gain above 1E16/cm$^2$ and possibly up to 1E17/cm$^2$.
The goal is to pave the way for a new sensor design that can efficiently perform precise tracking and timing measurements up to 1E17/cm$^2$ and beyond.
