Speaker
Description
During the era of the High-Luminosity (HL) LHC the experimental devices will be subjected to enhanced radiation levels with fluxes of neutrons and charged hadrons in the outer tracker detectors (200mm - 1200mm from the beam axis) from $3x10^{14}$ to $1x10^{15}$ neq/$cm^{2}$ and total ionization doses from 10 kGy to 750 kGy after 3000 $fb^{-1}$ of irradiation. A systematic program of radiation tests with neutrons and charged hadrons is being run by LHC collaborations in view of the upgrade of the experiment, in order to cope with the higher luminosity of HL-LHC and the associated increase in pile-up events and radiation fluxes. In this work, complementary radiation studies with gamma photons from a 60Co source are presented. The doses are of the orders of tens of kGy. The irradiated test structures contain among others gate-controlled diodes (GCD) and field-effect transistors (FET). Τhe alterations in the current components after irradiation are investigated. The results of IV measurements on these devices are presented as a function of the total absorbed radiation dose following a specific annealing protocol. The measurements are compared with the results of a TCAD simulation. The devices under test are made of oxygen enriched float zone p-type silicon.
