Conveners
Silicon with Internal Gain III
- Hartmut Sadrozinski (SCIPP UC Santa Cruz)
Prof.
Francisco Rogelio Palomo Pinto
(Escuela Técnica Superior de Ingenieros Universidad de Sevilla)
07/06/2016, 16:30
Dr
giulio Pellegrini
(Centro Nacional Microelectronica IMB-CNM-CSIC)
07/06/2016, 16:50
I will report the first measurements of detectors fabricated with Ga implant and the new proposal for a project to increase the radiation hardness of LGAD sensors using Carbon. In LGAD the gain decreases with irradiation, which can be attributed to effective acceptor removal in the multiplication layer. The relative decrease of measured charge is much more pronounced for LGAD than for standard...