Coordinatori
Radiation Damage I
- Marko Mikuz (Univ. Ljubljana / J. Stefan Inst.)
Dr.
Leona Cristina Nistor
(National Institute of Materials Physics)
08/06/16, 09:00
Dr.
Vasile Sergiu Nistor
(National Institute of Materials Physics)
08/06/16, 09:20
Sig.
Evangelos - Leonidas Gkougkousis
(Laboratoire de l'Accelerateur Lineaire)
08/06/16, 09:40
The creation of deep level defects after irradiation lowers the efficiency of a detector while increasing its operational voltage. The case of acceptor removal, observed in irradiated LGAD and other types of detectors suggests the presence of a secondary effect in addition to deep acceptor level generation. Estimation of the active dopant profile demonstrates a decrease in the acceptor...
Dr.
Eugenijus Gaubas
(Vilnius University)
08/06/16, 10:00
It had been shown that measurements of carrier recombination lifetime can be employed for contact-less and fast evaluation of large fluences of the hadron irradiations. The same calibration function for fluence evaluations derived using electron-grade crystalline silicon wafer fragments fits well the absolute values of carrier recombination lifetime related to the densities of radiation...
