Conveners
Simulation and HV CMOS
- Michael Moll (CERN)
Dr
Marco Bomben
(LPNHE)
06/06/2016, 11:30
In this talk we will present a comparison between Silvaco and Synopsys predictions when it comes to radiation damage models; the focus will nbe on the recent Perugia model.
Leakage current increase, depletion voltage and trapping time will be extracted and compared.
The simulated structures will include standard and LGAD n-on-p diodes.
Dr
Timo Peltola
(Helsinki Institute of Physics)
06/06/2016, 11:50
Interpixel isolation and charge sharing before and after irradiation in the proposed Phase II planar pixel n-on-p detectors was studied by TCAD simulations. Both p-spray and p-stop isolated devices with varied isolation doping concentration and depth as well as interface charge density were investigated. The results show that the acceptors in the isolation implantation are compensating the...
Mr
Igor Mandić
(Jožef Stefan Institute)
06/06/2016, 12:10
E-TCT measurements with HVCMOS detectors produced by different foundries on substrates with different resistivities will be presented. Samples were irradiated with reactor neutrons in Ljubljana and with protons at CERN PS. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrode could be directly observed. In reverse biased HVCMOS...
Mr
Emanuele Cavallaro
(IFAE)
06/06/2016, 12:30
H35Demo chips are High-Voltage CMOS (HV-CMOS) devices produced in the 350nm AMS technology (H35) on wafers with four different substrate resistivity, the standard one of 20 Ω · cm and 80, 200 and 1000 Ω · cm. The aim of this HV-CMOS production is to study the radiation hardness of such detectors and investigate the possibility to introduce this technology in the next ATLAS tracker upgrade for...
