28th RD50 Workshop (Torino)

Characterization of NitroSil diodes at KIT

Not scheduled

20m

Aula Magna della Cavallerizza Reale (Torino)

Speaker

Alexander Dierlamm (Karlsruhe Institute of Technology)

Description

Diodes made from three different wafer materials (FZ, N-rich FZ, O-rich FZ) have been irradiated with protons (5e13 to 5e15neq/cm²) and are being characterized (IV, CV, TCT). Here we present the first results of these measurements.