Speaker
Description
The next generation of silicon pixel detectors at high energy physics experiments sets unprecedented and extreme requirements to the microelectronic systems that are used to read out the sensors. Front-end integrated circuits will have to provide advanced analog and digital signal processing functions in high-density pixel readout cells, while handling huge data rates, operating at low power and standing extreme radiation levels. This talk is focused on the current effort to qualify advanced CMOS technology nodes (in particular the 28 nm one) and develop chip designs addressing the need for an adequate tolerance to ionizing radiation levels exceeding a total dose of 1 Grad. Analog functions such as signal amplification and discrimination are still crucial in these new designs, and the talk will discuss how analog performance of nanoscale CMOS circuits is affected by the operation in extreme radiation environments.
