Speaker
Description
Monolithic CMOS silicon sensors represent an important innovation for high-energy physics experiments due to their cheaper production and assembly cost compared to hybrid ones, where the electronics and the sensor are produced on different silicon substrates and later connected using bonding techniques. However, concerning the time resolution, today the most mature and high-performance technology is represented by the Low Gain Avalanche Diode (LGAD), an hybrid solution of a silicon sensor with an internal gain.
The last ARCADIA submission exploited the integration of the LGAD concept in CMOS Monolithic Active Pixel Sensors (MAPS) to obtain the benefits provided by both technologies. The multiplication of the signals in MAPS has a major impact on the signal-to-noise ratio; hence, the power consumption of the in-pixel front-end can be lowered to achieve the same performances. One of the possible applications of this innovative sensor is the Time-Of-Flight (TOF) system for a next generation heavy-ion experiment in high-energy physics, named ALICE 3 at the LHC. Moreover, this technology presents attractiveness for space applications where low power absorption is desired. Nevertheless, the union of the two technologies still lies in its early stages, and vigorous R&D is necessary.
This presentation will focus on the latest characterization results on these structures with internal gain fabricated in a standard 110 nm CMOS technology. An overview of these sensors will be provided, with emphasis on laboratory measurements and comparisons of experimental data with simulated ones. Promising results obtained from the analysis of the data collected during the latest test beam at CERN PS will be also shown. Finally, the future perspectives and an insight into the ongoing R&D will be given.
