Speaker
Prof.
Norbert Wermes
(University of Bonn)
Description
Measurements on irradiated diamond pixel detectors (poly-crystalline and single crystal) equipped with the ATLAS FE-I4 pixel readout chip are confronted with similar silicon pixel detectors regarding their performance at high radiation fluences as expected at an HL-LHC.
Within the competition of CVD diamond detectors with silicon the question of the expected S/N – ratio (SNR) after irradiation has been an issue ever since. While before radiation damage silicon yields a larger signal due to the much smaller band gap at similar noise levels, this situation changes in environments in which fluences in excess of $\approx 10^{15}$ neq/cm$^2$ are expected. Diamond is attractive because of its tiny leakage current even after irradiation and its smaller capacitance both rendering lower noise. We present measurements on irradiated poly- and mono-crystalline pixel sensors in comparison with silicon pixel devices, equipped with the FE-I4 chip. The noise for both diamond and silicon detectors is determined by a full transient noise analysis and by measuring the different pixel capacitances with a dedicated chip (PixCap). The simulations are compared with measurements.
The comparison is finally completed by predicting the signal an the leakage current at a given fluence and dividing by the noise. The result is the signal to noise ratio for a given fluence for diamond and planar silicon pixel detectors.
Primary author
Prof.
Norbert Wermes
(University of Bonn)
Co-authors
Fabian Huegging
(University of Bonn)
Hans Krüger
(University of Bonn)
Harris Kagan
(Ohio State University)
Jieh-Wen Tsung
(University of Bonn)
Mirek Havranek
(University of Bonn)
