Speaker
Dr
Serena Mattiazzo
(PD)
Description
We present an innovative monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90nm CMOS process on a substrate of moderate resistivity. This allows charge collection by drift from a depleted region while maintaining the other advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like having a single piece detector and using a standard CMOS production line.
The collection by drift mechanism, coupled to the low capacitance design of the collecting node made possible by the monolithic approach, provides an excellent signal to noise ratio straight at the pixel cell together with a radiation tolerance far superior to conventional un-depleted MAPS.
We will illustrate the detector design and present measurement results obtained with the first prototypes from laser, radioactive source and beam test experiments. The excellent signal-to-noise performance is demonstrated by the capability of the device to separate the peaks in the spectrum of a Fe-55 source. We will also highlight the interaction between physics goals, pixel cell design and device architecture which all together aim toward a very precise direction in the development of such depleted monolithic pixel devices.
Primary authors
Dr
Piero Giubilato
(Padova University)
Dr
Walter Snoeys
(CERN)
