Speaker
Mr
Maurizio Boscardin
(FBK)
Description
The foreseen luminosity of the new experiments in High Energy Physics will require that the next generation of vertex detectors will be able to sustain fluencies up to $1\times10^{16}$ cm$^{−2}$. Moreover, in many experiments there is a demand for the minimization of the material budget of the detectors. Therefore, thin pixel devices on epitaxial material are a natural choice to fulfill these requirements due to their rad-hard performances and low active volume. We present an R&D activity aimed at developing a new thin hybrid pixel device in the framework of PANDA experiments. The detector is a p-on-n pixel sensor realized starting from epitaxial silicon wafers, in which the sensitive area is the epi-layer itself, while the low-resistivity substrate acts as a mechanical support. After completion of the fabrication, the substrate is back thinned down to a value slightly larger than the epitaxial layer thickness, which can be in the order of 50-100 microns. We present the main technological steps and some electrical characterization of the fabricated devices before and after back thinning and after bump bonding to the FE electronics.
Primary author
Mr
Maurizio Boscardin
(FBK)
Co-authors
Dr
Daniela Calvo
(INFN Sezione di Torino)
Dr
Gabriele Giacomini
(FBK)
Dr
Nicola Zorzi
(FBK)
Dr
Richard Wheadon
(INFN Sezione di Torino)
Dr
Sabina Ronchin
(FBK)
