Speaker
Dr
Vasily Kushpil
(Nuclear Physics Instirute of ASCR)
Description
We use a simplified model for the pixel diode based on the differential
equation to describe a process of diffusion and drift.
This model allows to estimate the S/N resolution depended on the radiation
absorbed dose. The estimations were done for the HPD, FDAPS, MAPS.
We also studied the dependence the S/N resolution on the geometrical
proportions of the diode's area. The results can be useful for developing
of new PD with high radiation hardness.
Primary author
Dr
Vasily Kushpil
(Nuclear Physics Instirute of ASCR)
Co-author
Dr
Svetlana Kushpil
(Nuclear Physics Instirute of ASCR)
