Speaker
Dr
Alessandro Tarolli
(Fondazione Bruno Kessler)
Description
In this contribution we show selected results on the first release of UV-enhanced SiPM technology (NUV-SiPM) produced at FBK. In particular, we focus our attention on the photo-detection efficiency (PDE) performance. The PDE in the near-UV part of the light spectrum is mainly limited by the quantum efficiency term since the photo-generation takes place in a very shallow region of the silicon. Thus, besides using a p$^+$-on-n junction configuration to have an avalanche triggered by the electrons, we need to implement a very shallow p$^+$ layer.
In this context, we will show that our NUV-SiPM technology features a quantum efficiency higher than 80% in the measured range between 360 nm and 420 nm. This allows to reach a PDE of 30% at 9 V over-voltage with a device featuring 50x50 $\mu$m$^2$ cell size and 45% fill factor. We will also show other important features of the device such as breakdown voltage temperature dependence, single-cell response uniformity and noise.
Primary author
Dr
Claudio Piemonte
(Fondazione Bruno Kessler)
Co-authors
Dr
Alberto Gola
(Fondazione Bruno Kessler)
Dr
Alessandro Ferri
(Fondazione Bruno Kessler)
Dr
Alessandro Tarolli
(Fondazione Bruno Kessler)
Dr
Nicola Serra
(Fondazione Bruno Kessler)
Dr
Nicola Zorzi
(Fondazione Bruno Kessler)
Dr
Tiziana Pro
(Fondazione Bruno Kessler)
