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It has already been shown how the shape of the current pulse produced by a SiPM in response to an incident photon is sensibly affected by the characteristics of the FE used to read out the detector [1]. For this reason, an accurate modeling of the SiPM is mandatory to identify the best solutions for the FE electronics, with regards to both its architecture and the choice of the most relevant design parameters.
When the application requires to approach the best theoretical time performance of the detection system, which calls for high bandwidth and low input resistance FE electronics, the influence of all the parasitics associated to the coupling SiPM – FE can play a relevant role and must be adequately modeled. In particular, it has been reported that the shape of the current pulse is affected by the parasitic inductance of the wiring connection between SiPM and FE [2].
In this contribution, we extend the validity of a previously presented SiPM model [1] to account for the wiring inductance. Analytical expressions of poles and zeroes of the resulting system have been derived, thus allowing to check for the possible presence of a pair of complex conjugate poles, which can produce undesired ringing in the signal waveform. Various combinations of the main performance parameters of the FE electronics (input resistance and bandwidth) have been simulated in order to evaluate their influence on the time accuracy of the detection system, when the time pick-off of each single event is extracted by means of a Leading Edge Discriminator technique.
[1] F. Corsi, C. Marzocca et al.: "Modelling a Silicon Photomultiplier (Sipm) as a Signal Source For Optimum Front-End Design", Nuclear Instruments and Methods in Physics Research A, vol. A572, pag. 416-418, 2007.
[2] J. Huizenga, S.Seifert et al.: "A fast preamplifier concept for SiPM-based time-of-flight PET detectors", Nucl. Instr. and Met. in Phys. Res. A, (2011), doi:10.1016/ j.nima.2011.11.012
