Speaker
Description
Silicon photomultipliers (SiPMs), owing to their low-level photon counting capabilities, have increased in popularity in the field of high energy astrophysics, particle physics and medical imaging. It is crucial to accurately characterise SiPMs so they can be optimised for a particular application such as the Compact High Energy Camera (CHEC-S) designed to image air Cherenkov showers. Extraction techniques applied to SiPMs can quantify opto-electrical parameters such as: gain; quenching resistance; junction, parasitic and grid capacitance; and slow and fast time constants. In this paper, we present electrical characterisations of two of the latest generation of SiPMs: Hamamatsu LVR3 S14520-6075 and Broadcom AFBR-S4N44C013. We apply and compare different extraction techniques to each sample, based on the Laplace Transform in the s-domain of the equivalent circuit model of an SiPM. These techniques typically utilise only the pulse tail, and therefore only parameterise the fast and slow fall times of the signal. We will discuss the improvement of existing methods that may be possible by including the discharge phase of the SiPM to parameterise the complete pulse including both the rise time and the fast and slow fall time constants.
