Epitaxial growth of graphene on SiC/Si substrates in UHV: studies of Si diffusion

by Nunzio Motta (Institute for Future Environments and CPME School Queensland University of Technology, Brisbane, Australia)

Monday 12 May 2014, 16:00 → 17:00 Europe/Rome

Aula Rasetti (Dip. di Fisica - Edificio G. Marconi)

Graphene obtained from thermal decomposition of 3C SiC/Si is very appealing in terms of cost effectiveness and it is perfectly compatible with the Si technology. We obtained epitaxial graphene by annealing 3C SiC/Si (111) and 3C SiC (100) substrates in UHV and investigated the diffusion of Si in the SiC matrix during UHV annealing by XPS and STM. The number of graphene layers as a function of the temperature, obtained by XPS analysis follows an Arrhenius law, and is discus! sed in terms of the diffusion mechanism of Si atoms through the atomic lattice.