Oct 5 – 10, 2014
Capri-Naples, Italy
Europe/Rome timezone

PS3-15 Modelling the Deflection of 855 MeV Relativistic Electrons by a Bent Silicon Crystal Using TROPICS Software Package

Oct 9, 2014, 5:00 PM
1h 30m
Hotel La Residenza

Hotel La Residenza


Mr Yuriy Shtanov (Nikolaevich)


Modeling the deflection of 855 MeV electrons in (111) the planar channels bent crystal silicon performed by numerically solving the kinetic Fokker−Planck equation in the phase space of the transverse coordinates and velocities. It is shown that the simulation results do not describe the experiment.

Primary author

Mr Yuriy Shtanov (Nikolaevich)


Dmitry Morgun (SurGU, Surgut, Russia) Dr Vladimir Koshcheev (MAI, Moscow, Russia)

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