Speaker
Dr
Alexander Shchagin
(Kharkov Institute of Physics and Tecknology)
Description
A.V. Shchagin1,2, N.F. Shul’ga1,3, S.V. Trofymenko1
1Kharkov Institute of Physics and Technology, Kharkov, Ukraine
2Belgorod State University, Belgorod, Russia
3Kharkov National University, Kharkov, Ukraine
The thickness of the depleted zone in a partially depleted semiconductor detector can be smoothly changed by variation of high voltage power supply of the detector [1]. In present paper we propose application of partially depleted semiconductor detectors for measurements of ionization loss of ultra-relativistic charged particle as a function of its path inside the semiconductor. Results of preliminary measurements of most probable ionization loss in Si of electrons emitted from 207Bi radioactive source as a function of the power supply voltage of Si detector are presented. Prospects for application of such detectors for research of evolution of electromagnetic field of the particle which crosses a boundary of a solid target [2] are discussed. The paper became possible partially due to grant SFFR #58/17.
References
1. E. Kowalski. Nuclear electronics, Springer-Verlag, Berlin, New York, 1970.
2. N.F. Shul’ga, S.V. Trofymenko Nucl. Instrum. Meth. B 309 (2013) 167.
Primary author
Dr
Alexander Shchagin
(Kharkov Institute of Physics and Tecknology)
