Novel Materials Properties at Atomically Thin Limit

by Zhi-Xun Shen (Stanford University, USA)

Tuesday 10 Dec 2013, 16:00 → 18:00 Europe/Rome

Aula Conversi (Dip. di Fisica - Edificio G. Marconi)

In this talk, I will discuss recent progresses in uncovering novel materials properties at ultra-thin limit, with focus on monolayer superconductor FeSe and semiconductor MoSe2 respectively. In the former case I will show angle-resolved photoemission spectroscopy (ARPES), mutual inductance, and other measurements on few-unit-cell thick FeSe films grown on Nb-doped SrTiO3. Our data provide clear evidence for the strong coupling between the FeSe electrons and certain collective modes of SrTiO3, suggesting a pathway of “integrated functional components” approach to boost superconducting properties. In the latter case I will use ARPES spectroscopy to demonstrate that in monolayer MoSe2 film appears a significant spin-splitting at the valence band maximum. This effect could greatly expand its possible application in spintronic devices.