Atomic-scale doped semiconductor devices

by Giordano Scappucci (University of New South Wales, Sydney, Australia)

Thursday 11 Apr 2013, 16:00 → 17:00 Europe/Rome

Aula Conversi (Dip. di Fisica - Edificio G. Marconi)

By integrating atomic precise doping with ultra-high vacuum scanning tunnelling microscope atomic-scale lithography, we outline a radically new fabrication route towards atomic-scale donor-based devices in Germanium. By repetition of atomically controlled doping cycles, we have demonstrated stacking of Ge:P 2D electron gases at the nanoscale. These results bold well towards the realization of ultra-scaled 3D epitaxial circuits in Ge comprising 1D wires and 0D quantum dots. The circuits may be relevant for future quantum information processing.