Jul 3 – 5, 2013
Sala Convegni della Cassa di Risparmio di Firenze
Europe/Rome timezone

Radiation performance of new semiconductor power devices for the LHC experiment upgrades

Jul 3, 2013, 3:10 PM
25m
Sala Convegni della Cassa di Risparmio di Firenze

Sala Convegni della Cassa di Risparmio di Firenze

via Folco Portinari, 5 - Florence (ITALY)

Speaker

Simone Gerardin (Dept. of Information Engineering, University of Padova)

Description

GaN and SiC power devices were extensively tested under different types of radiation, in the framework of the APOLLO R&D collaboration, aiming to use these new technologies for designing power supplies for the future LHC experiments upgrades. SiC power MOSFETs were irradiated with gamma-rays, neutrons, protons and heavy ions (Iodine, Bromine) at different energies (20MeV - 550MeV). They showed very good performances in terms of Total Ionizing Dose (TID) sensitivity, but exhibited a quite poor Safe Operating Area (SOA) with respect to Single Event Effects (SEEs). Enhancement-mode GaN transistors manufactured by EPC, with blocking voltage ranging from 40V to 200V, were irradiated with gamma-rays, heavy ions (Iodine, Bromine), high and low energy protons. They showed a very good SOA toward SEE. After the irradiation with 3-MeV protons at the highest fluence (4∙10^14 p/cm^2), the devices exhibited an increase of up to one order of magnitude in gate leakage, almost 1 V of threshold voltage reduction, degradation of the subthreshold slope, and drop in transconductance. The reduction in threshold is in contrast with the increase normally observed in GaN devices irradiated with protons, and is likely due to radiation effects in the layers introduced to engineer the positive threshold voltage

Primary authors

Agostino Lanza (INFN Pavia) Alessandro Paccagnella (Dept. of Information Engineering, University of Padova) Annunziata Sanseverino (Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio) Carmine Abbate (Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio) Enrica Ghisolfi (FN S.p.A.) Enrico Zanoni (Dept. of Information Engineering, University of Padova) Fabiana Rampazzo (Dept. of Information Engineering, University of Padova) Francesco Giuliani (Dipartimento di Ingegneria dell’Informazione, University of Parma) Francesco Iannuzzo (Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio) Francesco Velardi (Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio) Gaudenzio Meneghesso (Dept. of Information Engineering, University of Padova) Gianni Busatto (Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio) Giorgio Spiazzi (Dept. of Information Engineering, University of Padova) Marco Riva (INFN Milano) Massimo Lazzaroni (Dipartimento di Fisica, Università degli Studi di Milano) Mauro Citterio (INFN Milano) Monica Alderighi (INAF-IASF) Nicola Delmonte (Dipartimento di Ingegneria dell’Informazione, University of Parma) Paolo Cova (Dipartimento di Ingegneria dell’Informazione, University of Parma) Riccardo Silvestri (Dept. of Information Engineering, University of Padova) Salvatore Fiore (ENEA UTTMAT) Simone Gerardin (Dept. of Information Engineering, University of Padova) Stefania Baccaro (ENEA UTTMAT) Stefano Latorre (INFN Milano) Valentina De Luca (Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio)

Presentation materials