Speaker
Description
Single Avalanche Photo Diodes (SPADs) have gained significant traction across diverse fields such as medical imaging, quantum communication, and time-of-flight measurements, including LiDAR (Light Detection and Ranging). This naturally extends to applications in fundamental research, where single photon detection, low noise characteristics, and superior timing resolution are key.
An optimized design and process flow was developed in a specialized 350 nm CMOS technology, yielding SPADs with extremely low Dark Count Rates [1].
Combining this with a novel technology for 3D integration using direct bonding of 8” wafers and customized through-silicon vias, we can achieve a highly compact and integrated combination of low-noise, backside-illuminated (BSI) SPADs with circuits fabricated in standard CMOS technologies. This was successfully demonstrated for applications in LiDAR and quantum imaging [2].
With this BSI approach, we demonstrate how additional techniques in post-CMOS processing can be leveraged to enhance the detection probability and efficiency in application specific spectral regions and thus optimize the performance for various applications in photon detection.
[1] S. Grosse, S. Dreiner, J. Hauser, D. Weiler, M. Ligges, P. vom Stein, S. Weyers : Ultra-low noise SPADs in 350 nm CMOS technology for Cherenkov radiation detection in particle and astrophysics In: XI International Workshop on Ring Imaging Cherenkov Detectors
[2] Grosse, Simon; Steuer, Andrei; Vom Stein, Peter; Zeidler, Christopher; Haase, Jan F.: A 64 x 48 BSI SPAD sensor based on 8‘‘ wafer 3D stacking technology. In: Sensor and Measurement Science International (SMSI) 2021. Wunstorf: AMA Service GmbH, 2021, B10.1: pp.167 - 168.
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