Speaker
Prof.
Hartmut Backe
(Institute for Nuclear Physics)
Description
Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission from a 4-period epitaxially grown strained layer Si-Ge undulator with a period length of 9.9 μm. Electron energies between 190 and 855 MeV have been chosen. In comparison with a flat silicon reference crystal, a broad excess yield around the theoretically expected photon energies between 0.036 and 0.637 MeV, respectively, has been observed for channeling at the undulating (110) planes.
Primary author
Prof.
Hartmut Backe
(Institute for Nuclear Physics)
Co-authors
Dr
Dirk Krambrich
(Institute for Nuclear Physics, University of Mainz, Germany)
Dr
J. Lundsgaard Hansen
(Department of Physics and Astronomy, University of Aarhus, Denmark)
Dr
K. K. Andersen
(Department of Physics and Astronomy, University of Aarhus, Denmark)
Prof.
Ulrik I. Uggerhøj
(Department of Physics and Astronomy, University of Aarhus, Denmark)
Dr
Werner Lauth
(Institute for Nuclear Physics, University of Mainz, Germany)
