IFD 2025 - INFN Workshop on Future Detectors

Innovations in the design of thin silicon sensors for extreme fluences

19 Mar 2025, 10:00

5m

"Rapid fire" talk Solid State Detectors Solid State Detectors

Speaker

Marco Ferrero (Istituto Nazionale di Fisica Nucleare)

Description

State-of-the-art silicon sensors are able to operate efficiently up to
fluences of 1E16/cm. Future frontier accelerators envisage the use of
tracking detectors in environments with fluences exceeding 1E17/cm.
The possible solution to overcome the present limit in radiation tolerance
is to exploit the recently observed saturation of radiation damage effects
on silicon, together with the usage of thin substrates, intrinsically less
affected by radiation. To cope with the small signal coming from thin
sensors, the Low-Gain Avalanche Diode (LGAD) design with internal
multiplication of the charge carriers represents the ideal framework.
An innovative design of the LGAD gain implant will be presented based on
an acceptor-donor compensation of the dopant atoms to preserve internal
gain above 1E16/cm and possibly up to 1E17/cm.
The presentation will introduce the basic concepts of the ERC
Consolidator Grant CompleX.
The goal is to pave the way for a new sensor design that can efficiently
perform precise tracking and timing measurements up to 1E17/cm and beyond.

Presentation materials

FerreroM_SensorExtremeFluence_IFD2025.pdf