Speaker
Description
In this work, the aim of simulations is to optimize a Silicon Carbide detector (SiC) for neutrons with
energy = 14.1 MeV. The device has an active thickness obtained by epitaxial growth and an active area
of 25 mm2
. In the first step of the Fluka simulations, we compare SiC detector performance to Diamond
and Silicon detectors, with the same geometric features. In the second step of the simulations, we have
found the best solution to improve the response of the detector for a fixed epitaxial layer thickness
using an overlayer of aniline (C6H7N). Furthermore, a saturation of the alfa-particles at SiC thickness of
around 200 microns have been observed by Fluka. Finally, the Synopsis numerical simulations have
been used to optimize the SiC detector edge structure.
