Speaker
Description
Silicon carbide (SiC) is a wide-bandgap semiconductor extensively investigated over the past decades as a potential solution for radiation detection in harsh environments, such as those with high radiation fluences or high temperatures. SiC is characterized by a good radiation hardness, insensitivity to visible light, and suitability to high-temperature operation - unattainable use performances for silicon detectors. These properties make SiC highly attractive for next-generation nuclear physics experiments and applications. However, SiC devices with the required characteristics in terms of active area, thickness and purity are not commercially available.
In recent years, the SiCILIA project, a collaborative effort of INFN-CSN5 and CNR-IMM, has carried out R&D activities aimed at developing new advanced production technologies for manufacturing state-of-the-art thick, large area, p/n junction SiC detector devices.
This contribution will present an overview of the SiCILIA project, reviewing the performances of the SiC detectors developed within this framework. These detectors have been successfully tested in various application fields, and the excellent results demonstrate their significant potential for an extensive use of SiC in both fundamental and applied nuclear physics. Additionally, some of the envisioned applications in innovative detection systems will be discussed.
