Speaker
Othmane Bouhali
(Texas A&M University at Qatar)
Description
We conduct a comprehensive analysis of the structural, electronic, and optical properties of bismuth-based scintillators, with a particular focus on the role of intrinsic defects and material composition.
We employ density functional theory (DFT) calculations with the PBE0 hybrid functional, we delve into the nuances of defect processes in Bi4Ge3Si3O12 (BGO) scintillators and explore the influence of varying Ge/Si ratios in Bi4Ge3xSi3(1-x)O12 (BGSO) crystals. Our investigation reveals that intrinsic defects, particularly antisite types, significantly influence the scintillation performance by introducing ingap states and affecting charge trapping mechanisms.
| Field | Detectors and electronics |
|---|
Primary authors
Othmane Bouhali
(Texas A&M University at Qatar)
Dr
Salawu Omotayo
(Texas A&M)
